Site-competition epitaxy for controlled doping of CVD silicon carbide

摘要

A "site-competition" epitaxy technique based on the use of the Si/C ratio for dopant control is presented for silicon carbide CVD epitaxial layers. This technique is also applicable to the general growth of silicon carbide. Results from room temperature mercury-probe CV and low temperature photoluminescence (LTPL) measurements indicate that very low net carrier concentrations of about 1×10~(14) cm~(-3) are achievable using this novel growth technique. This growth technique also affords intermediate dopant control as well as the production of degenerately doped n-type and p-type epilayers, estimated to be >1×10~(19) cm~(-3), which result in "ohmic as deposited" contacts for a variety of metals. Superior electronic devices have also been accomplished using site-competition epitaxy, including world-record breaking 3C- (>200 V) and 6H- (>2000 V) silicon carbide diodes.