Bulk crystals, thin films and devices of the wide band gap semiconductors of silicon carbide and the Ⅲ-Ⅴ nitrides of aluminum, gallium and indium

摘要

The extremes in the thermal and electronic properties of SiC and the III-V nitrides of B, Al, Ga and In allow the types and the numbers of present and conceivable device applications in these materials to be substantial. Single crystal boules and wafers of the 6H- and 4H-SiC polytypes have been produced. However, micropipes and related defects cause device degradation. Molecular beam and atomic layer epitaxial thin film growth techniques and new devices have recently been reported. GaN continues to be heavily investigated; however, n- and p-type doping and alloys with A1N and InN and associated heterostructures are now being studied to produce blue LEDs. Recent developments, current problems and required materials research are discussed in the following sections.