The Silicon Vacancy in SiC

机译：SiC中的硅空位

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摘要

A model is presented for the silicon vacancy in SiC. The previously reported photoluminescence spectra in 4H and 6H SiC attributed to the silicon vacancy are in this model due to internal transitions in the negative charge state of the silicon vacancy. The magnetic resonance signals observed are due to the initial and final states of these transitions.

机译：给出了SiC中硅空位的模型。先前报道的归因于硅空位的4H和6H SiC的光致发光光谱在该模型中归因于硅空位的负电荷状态的内部跃迁。观察到的磁共振信号归因于这些转变的初始和最终状态。

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来源
《Silicon carbide and related materials 2008》|2008年|347-352|共6页
会议地点 Barcelona(ES);Barcelona(ES)
作者
Erik Janzen; Adam Gali; Patrick Carlsson; Andreas Gaellstroem; Bjoern Magnusson; N.T. Son;
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作者单位

Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping, Sweden;

Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki ut 8, H-1111 Budapest, Hungary;

Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping, Sweden;

Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping, Sweden;

Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping, Sweden Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki ut 8, H-1111 Budapest, Hungary Norstel AB, Ramshaellsvaegen 15, SE-602 38 Norrkoeping, Sweden;

Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping, Sweden;

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原文格式 PDF
正文语种 eng
中图分类工程材料一般性问题;
关键词
silicon vacancy; ODMR; EPR; photoluminescence;

机译：硅空位ODMR； EPR；光致发光;

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专利

1. Carrier dynamics of silicon vacancies of SiC under simultaneous optically and electrically excitations [J] . Yuichi Yamazaki, Yoji Chiba, Shin-ichiro Sato, Applied Physics Letters . 2021,第2期

机译：同时光学和电激励下SiC硅空位的载波动态
2. Thermometric quantum sensor using excited state of silicon vacancy centers in 4H-SiC devices [J] . Tuan Minh Hoang, Hitoshi Ishiwata, Yuta Masuyama, Applied Physics Letters . 2021,第4期

机译：在4H-SIC器件中使用激励状态的温度量子传感器
3. Optical spin initialization of spin-3/2 silicon vacancy centers in 6H-SiC at room temperature [J] . Harpreet Singh, Andrei N. Anisimov, Ilia D. Breev, Physical review.B.Condensed matter and materials physics . 2021,第10期

机译：在室温下6H-SiC的旋转旋转初始化旋转-3 / 2硅空位中心
4. Nitrogen-Vacancy Complexes in SiC ― Final Annealing Products of the Silicon Vacancy? [C] . U. Gerstmann, E. Rauls, Th. Frauenheim, 4th European Conference on Silicon Carbide and Related Materials (ECSCRM 2002); Sep 2-5, 2002; Linkoeping, Sweden . 2002

机译：SiC中的氮空位络合物-硅空位的最终退火产物？
5. Compact modeling of Silicon Carbide (SIC) Vertical Junction Field Effect Transistor (VJFET) in PSpice using Angelov model and PSpice simulation of analog circuit building blocks using SIC VJFET model. [D] . Purohit, Siddharth. 2006

机译：使用Angelov模型在PSpice中对碳化硅（SIC）垂直结场效应晶体管（VJFET）进行紧凑建模，并使用SIC VJFET模型对PSpice模拟电路构建模块进行仿真。
6. C0.3N0.7Ti-SiC Toughed Silicon Nitride Hybrids with Non-Oxide Additives Ti3SiC2 [O] . Heng Luo, Chen Li, Lianwen Deng, 2020

机译：具有非氧化物添加剂Ti3SiC2的C0.3N0.7Ti-SiC增韧氮化硅杂化物
7. Structure of the silicon vacancy in 6H-SiC after annealing identified as the carbon vacancy–carbon antisite pair [O] . Lingner Th., Greulich-Weber S., Spaeth J. M., 2001

机译：退火后6H-SiC中硅空位的结构被确定为碳空位-碳反位对

The Silicon Vacancy in SiC

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