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Direct Observation of Lifetime Killing Defects in 4H SiC Epitaxial Layers via Spin Dependent Recombination in Transistors

机译：通过自旋相关重组在晶体管中直接观察4H SiC外延层中的终生杀伤缺陷

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We have identified a magnetic resonance spectrum associated with minority carrier lifetime killing defects in device quality 4H SiC.

机译：我们已经确定了与少数载流子寿命相关的磁共振谱，该谱消除了器件质量4H SiC中的缺陷。

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《Silicon carbide and related materials 2008》|2008年|299-302|共4页
会议地点 Barcelona(ES);Barcelona(ES)
作者
C. J. Cochrane; P. M. Lenahan; A. J. Lelis;
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作者单位

The Pennsylvania State University, University Park, Pennsylvania 16802, USA;

The Pennsylvania State University, University Park, Pennsylvania 16802, USA;

US Army Research Lab, 2800 Powder Mill Road, Adelphi, Maryland 20783, USA;

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原文格式 PDF
正文语种 eng
中图分类工程材料一般性问题;
关键词
recombination centers; lifetime killing defects; ESR; EPR; SDR;

机译：重组中心；终生致命缺陷； ESR； EPR；特别提款权;

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专利

1. Direct observation of lifetime killing defects in 4H SiC epitaxial layers through spin dependent recombination in bipolar junction transistors [J] . C. J. Cochrane, P. M. Lenahan, A. J. Lelis Extremes . 2009,第6期

机译：通过双极结型晶体管中的自旋相关复合，直接观察4H SiC外延层中的寿命杀灭缺陷
2. Identification of a silicon vacancy as an important defect in 4H SiC metal oxide semiconducting field effect transistor using spin dependent recombination [J] . C. J. Cochrane, P. M. Lenahan, A. J. Lelis Applied Physics Letters . 2012,第2期

机译：使用自旋相关复合法确定硅空位是4H SiC金属氧化物半导体场效应晶体管中的重要缺陷
3. Observation of trapping defects in 4H-silicon carbide metal-oxide-semiconductor field-effect transistors by spin-dependent recombination [J] . David J. Meyer, Patrick M. Lenahan, Aivars J. Lelis Applied Physics Letters . 2005,第2期

机译：通过自旋相关复合观察4H-碳化硅金属氧化物半导体场效应晶体管的俘获缺陷
4. High, Low, and Zero Field Spin Dependent Recombination in 4H SiC Metal Oxide Semiconductor Field Effect and Bipolar Junction Transistors [C] . P.M. Lenahan, C.J Cochrane, A.J. Lelis Gallium nitride and silicon carbide power technologies 4 . 2014

机译：4H SiC金属氧化物半导体场效应和双极结晶体管中的高，低和零场自旋相关复合
5. Analysis of Defect Structures in 4H Silicon Carbide Bulk Crystals, Epitaxial Layers and Power Devices [D] . Guo, Jianqiu. 2018

机译：4H碳化硅散装晶体，外延层和功率装置的缺陷结构分析
6. Effect of Low Pressure on Surface Roughness and Morphological Defects of 4H-SiC Epitaxial Layers [O] . Jichao Hu, Renxu Jia, Bin Xin, 2016

机译：低压对4H-SiC外延层表面粗糙度和形貌缺陷的影响
7. Impacts of recombination at the surface and in the substrate on carrier lifetimes of n-type 4H–SiC epilayers [O] . Kimoto Tsunenobu, Hiyoshi Toru, Hayashi Toshihiko, 2010

机译：表面和衬底中复合对n型4H–SiC外延层载流子寿命的影响
8. Identification and Carrier Dynamics of the Dominant Lifetime Limiting Defect in n(-) 4H-SiC Epitaxial Layers [R] . Klein, P. B. 2009

机译：n（ - ）4H-siC外延层主要寿命限制缺陷的识别和载流子动力学

Direct Observation of Lifetime Killing Defects in 4H SiC Epitaxial Layers via Spin Dependent Recombination in Transistors

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