Organic boron compounds as novel boron sources for p- doping of SiC-epilayers. Incorporation and characteriza- tion

摘要

We studied the possibility to use boron alkyls as doping sources for CVD growth of 4H-SiC. In this paper results of utilizing triethyl boron during the growth in a horizontal CVD reactor are presented.rnThe partial pressure of boron in the reactor was varied in the range of 10~(-8) to 10~(-5) bar. By SIMS and C-V measurements the incorporation of boron in the epilayer was analysed and the results of both methods are compared. The results show that the carrier and dopant concentrations in the layers depend linearly on boron partial pressure between 10~(16) and 10~(20) cm~(-3). For the preparation of pn-junctions two epilayers on an n-type substrate were subsequently grown. The first epilayer was doped with nitrogen, for the second layer the novel boron alkyl source was used. Forward and reverse bias I-V characteristics show good properties of the p-n junction.