Characterization of defects in hot-implanted 3C-SiC epitaxially grown on Si

摘要

Defects in cubic silicon carbide (3C-SiC) implanted with 200keV-nitrogen (N2~+) or aluminum ions (Al~+) at temperatures from room temperature to 1200℃ were characterized by electron spin resonance, photoluminescence, and sheet resistance measurements. The density of paramagnetic defects (g≈2.0030) introduced by implantation in 3C-SiC decreased significantly by hot-implantation above ≈800℃, indicating the improvement in the crystallinity of implanted layers. Recovery of damaged layers was also shown from photoluminescence of hot-implanted 3C-SiC. A new paramagnetic defect (g≈2.0035) was found to be produced by hot-implantation at high Al~+-doses (Al~+ dose ≥ 10~(15)/cm~2). The contribution of residual defects to electrical properties of implanted layers is discussed.