Sublimation growth of 6H-SiC bulk

摘要

6H-SiC bulk crystals have been grown by sublimation method. We can mainly see two kinds of defects, planar defects and vertical defects in the wafers. The dependence of these defects in the wafers on two kinds of source materials and growth pressure is reported in this paper. The etch pits were classified into three sizes, i.e., Iarge(25～35μm), medium(15～20μm), small(～10μm). In the cross sectional view, some vertical defects disappeared at the planar defects in the middle of the grown layer. The relation between planar defects and vertical defects are discussed.