Determination of the conduction band discontinuity in an n-type 3C-SiC/6H-SiC heterojunction

摘要

We have used high-temperature admittance spectroscopy measurements to determine the conduction band discontinuity of a 3C/6H-SiC heterojunction. This is the first experimental determination of the band discontinuity in this system. Using thermal admittance spectroscopy, we have determined the conduction band discontinuity in an n-n, 3C/6H-SiC heterojunction to be ΔE_C = 0.365 eV. The doping in the 3C-SiC layer was determined by capacitance-voltage measurements to be 2 × 10~(17) cm~(-3). By implication, since the total band gap difference is 0.633 eV, the valence band discontinuity can be calculated to be ΔE_V = 0.268 eV.