Epitaxial growth of 3C-SiC(111) on Si wafer from tetramethylsilane by rapid thermal chemical vapor deposition : growth mechanism

摘要

We have used rapid thermal chemical vapor deposition (RTCVD) technique to grow epitaxial SiC thin films on Si by pyrolyzing tetramethylsilane (TMS). The XRD spectra of SiC film grown on Si(111) indicate that the growth direction is along the (111) plane of β-SiC. Various analytic techniques have been employed to analyze chemical compositions of both the grown films and the reaction gas. The growth mechanism of the SiC films on Si substrates without carbonization process has been proposed based on the analytical results.