Mechanism of optical detection of cyclotron resonance in SiC

摘要

We present experimental evidence demonstrating that the dominant mechanism responsible for the optical detection of cyclotron resonance (ODCR) in SiC, at low temperatures and a common range of microwave power (<200 mW), is mainly due to microwave-induced lattice heating under the cyclotron resonance conditions. The results also show that at low temperatures and low microwave powers, the dominant scattering mechanism is impurity scattering, while carrier scattering by lattice phonons dominates under the high microwave power conditions.