Photocurrent of Si0.8Ge0.2/Si strained multiple quantum-wells grown by using UHVCVD

摘要

The optical property was studied for the Si0.8Ge0.2/Si strainedrnmultiple quantum-well (MQW) structure grown by using ultra highrnvacuum chemical vapor deposition (UHV-CVD). The structuralrnproperties of the Si0.8Ge0.2/Si strained MQW were investigatedrnusing high-resolution X-ray diffraction (HR-XRD). Thernphotocurrent spectrum of a Si0.8Ge0.2/Si strained MQW wasrnmeasured at the room-temperature and the liquid-nitrogenrntemperature. For Si0.8Ge0.2/Si strained MQW, the transition peaksrnrelated to the MQW region observed in the photocurrent spectrumrnwere preliminarily assigned to electron-heavy hole (e-hh) andrnelectron-light hole (e-lh) fundamental excitionic transitions.