Reliability of Ti-based Gate Dielectrics on strained-Si0.91Ge0.09 and Ge under Dynamic and AC Stressing

摘要

The trapped charge distributions in Al/TiO2/GeOxNy/p-Ge and Al/rnTiO2/SiOxNy/strained-Si0.91Ge0.09 structures subjected dynamicrnstress of different amplitude and frequency in order to analyze therntransient response and the degradation of the oxide as a function ofrndifferent stress condition. The current transients and voltagerntransient observed in dynamic voltage (-4V to -9V) and currentrnstresses (-2.5mA/cm2 to -12.5mA/cm2) have been interpreted inrnterms of the charging/discharging of interface and bulk traps. Thernevolution of the current during unipolar voltage stresses shows therndegradation being much faster at low frequencies than at highrnfrequencies.