SiGe HBT featuring fT > 600GHz at cryogenic temperature

摘要

A comparison of electrical performances of state-of-the-art SiGernheterojunction bipolar transistors at low temperature is presented.rnThe performances increase results from the diminution of transitrntimes thanks to the rise of non-stationary transport, the relativernincrease of the transconductance with the reduction of self-heatingrneffects, and the decrease of access resistances.