Temperature-dependent Operation of Ge on Si p-I-n Photodetectors

摘要

We investigate the temperature dependence of p-I-n photodetectorsrnrealized in germanium on silicon. The dark current increases by arnfactor 1.6÷1.9 every 10℃ and is typically dominated by generationrnin the space charge region, with diffusion contributing in the bestrnsamples. The NIR responsivity decreases with temperature inrndevices with a large defect-density, but is more stable in highrnquality photodiodes. These findings provide a relevant insight onrnthe design Ge-on-Si NIR detectors to be operated above roomrntemperature.