首页> 外文会议>ROMOPTO 2003: Seventh Conference on Optics >Photo-induced changes of the optical constants of chalcodenide Ge_(19)Sb_1Te_(80) films
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Photo-induced changes of the optical constants of chalcodenide Ge_(19)Sb_1Te_(80) films

机译:光致code化物Ge_(19)Sb_1Te_(80)薄膜的光学常数变化

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In this work a preliminary study of the influence of light illumination on the optical constants of chalcogenide thin films with non-stoichiometric Ge_(19)Sb_1Te_(80) composition is presented. Films of Ge_(19)Sb_1Te_(80) with a thickness of ~1 μm were deposited onto glass substrates by vacuum thermal evaporation of parent glasses. The as-deposited films were exposed to light by using a 500 W HBO mercury lamp. The optical constants of the films, before and after their illumination, were evaluated from the ellipsometric measurements in the spectral range of 300-820 nm. It has been established that illumination of the films leads to a decrease of the refractive index in the studied spectral region, while a slight increase of the extinction coefficient in the 600-800 nm range is observed. For the given film composition the optical bandgap energy of 0.76 eV reduces to 0.62 eV. The film structure shows a very slow recovery expressed in the increase of bandgap energy toward its initial value. The observed decrease of the bandgap energy after illumination is indicative that the film structure undergoes rearrangements upon exposure to light leading to the effect of photodarkening.
机译:在这项工作中,初步研究了光照对具有非化学计量的Ge_(19)Sb_1Te_(80)组成的硫族化物薄膜的光学常数的影响。通过母玻璃的真空热蒸发将厚度约为1μm的Ge_(19)Sb_1Te_(80)薄膜沉积在玻璃基板上。通过使用500 W HBO汞灯将沉积后的膜曝光。通过在300-820nm光谱范围内的椭偏测量来评估膜在照射之前和之后的光学常数。已经确定,膜的照明导致所研究的光谱区域中的折射率降低,而在600-800nm范围内观察到消光系数略有增加。对于给定的膜组成,光学带隙能量从0.76 eV降低到0.62 eV。膜结构显示出非常缓慢的恢复,表现为带隙能量朝其初始值增加。照明后观察到的带隙能量降低表明膜结构在曝光后发生了重排,从而导致光暗化效应。

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