High Operating Temperature MWIR photon detectors based on Type II InAs/GaSb superlattice

摘要

Recent efforts have been paid to elevate the operating temperature of Type II InAs/GaSb superlattice Mid Infrared photon detectors. Optimized growth parameters and interface engineering technique enable high quality material with a quantum efficiency above 50%. Intensive study on device architecture and doping profile has resulted in almost one order of magnitude of improvement to the electrical performance and lifted up the 300K-background BLIP operation temperature to 166K. At 77K, the ～4.2 μm cut-off devices exhibit a differential resistance area product in excess of the measurement system limit (10~6 Ohm.cm~2) and a detectivity of 3×10~(13)cm.Hz~(1/2)/W. High quality focal plane arrays were demonstrated with a noise equivalent temperature of lOmK at 77K. Uncooled camera is capable to capture hot objects such as soldering iron.