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Scale-up of LPE processes for flexibility in manufacturing

机译:扩大LPE工艺以提高制造灵活性

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Abstract: Focal plane arrays fabricated in Hg$-1$MIN@x$/Cd$-x$/Te have matured to the point where they are entering pilot production for military and civilian applications. Loral chose the p-on-n heterostructure photodiode architecture produced by a two step LPE process for production scale-up because of its demonstrated high performance over a broad range of cut-off wavelengths from $APEQ 4 $mu@m to $GRT 15 $mu@m. To meet the manufacturing requirements of high throughput and flexibility, Loral has successfully scaled and transferred into production, both tellurium rich horizontal slider (for growth of the active n-type base layer) and mercury rich vertical dipping (for growth of the p-type cap layer) technologies. This approach capitalizes on the advantages of each process to maximize the producibility of LPE films in a manufacturing environment. This paper discusses the advantages of horizontal Te-rich growth. Production reactors have demonstrated excellent compositional uniformity ($POM 0.005 in x) over 24 cm$+2$/. Issues related to the scale-up of the equipment are discussed. !0
机译:摘要:以Hg $ -1 $ MIN @ x $ / Cd $ -x $ / Te制成的焦平面阵列已经成熟到可以进入军事和民用应用的试生产阶段。 Loral选择通过两步LPE工艺生产的p-on-n异质结构光电二极管架构进行生产规模化,因为它在从$ APEQ 4 $ mu @ m到$ GRT 15的宽截止​​波长范围内均具有高性能百万美元为了满足高产量和灵活性的制造要求,Loral已成功进行规模化并转移到生产中,富碲水平滑块(用于生长有源n型基层)和富汞垂直浸渍(用于生长p型)盖层)技术。这种方法利用了每个过程的优势,以在制造环境中最大化LPE膜的可生产性。本文讨论了水平富Te增长的优势。生产反应器已证明在24 cm $ + 2 $ /的范围内具有出色的组成均匀性($ POM 0.005 in x)。讨论了与设备放大相关的问题。 !0

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