Optical properties of quantum wells with embedded #delta#-strained layers

摘要

We present a new type of semiconductor quantum well structure that exhibits novel optical polarization properties. This structure has embedded #delta#-strained layers in an unstrained quantum well. By adjusting the thickness and the position of the #delta#-strained layers, the quantum confined Stark effect for the heavy- and light- holes can be engineered separately to control the bias dependent polarization properties. Experimental results agree well with theory. These unique bias dependent polarization properties have important applications in optoelectronic devices when specific polarization properties are required.