Nanometer structures for optics

摘要

In this article state of the art nanometer fabrication techniques are reported for application in optical devices. Special emphazis will be spent on the device structures for the visible emission range. Furthermore we discuss low damage dry etching and epitaxial regrowth of etched SQW-and laser structures. In addition we show how studies of carrier capture and optical switching effects can be accessed by nanofabricaton techniques mostly important for low dimensional dvices. The material systems we investigated are the GaAs- and InP-based systems (Al)GaAs/GaAs and InGaAs(P)/InP for short- and long wavelength optoelectronic devices.