Strain-Compensated p-Channel InGaP/InGaAs Heterostructure Field-Effect Transistors

机译：应变补偿p沟道InGaP / InGaAs异质结构场效应晶体管

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Undoped strain-compensated In_(0.36)Ga_(0.64)P/In_(0.20)Ga_(0.80)As structures were fabricated into p-channel heterostructure field-effect transistors (HFETs) through Zn implantation. Their device results are shown to be better than those of strain-uncompensated In_(0.48)Ga_(0.52)P/In_(0.20)Ga_(0.80)As p-channel HFETs.

机译：通过Zn注入将未掺杂的应变补偿In_（0.36）Ga_（0.64）P / In_（0.20）Ga_（0.80）As结构制成p沟道异质结构场效应晶体管（HFET）。结果表明，它们的器件结果优于无应变In_（0.48）Ga_（0.52）P / In_（0.20）Ga_（0.80）As p沟道HFET的结果。

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《Proceedings of the symposium on light emitting devices for optoelectronic applications and the Twenty-Eighth state-of-the-art program on compound semiconductors》|1998年|p.450-454|共5页
会议地点 San Diego CA(US);San Diego CA(US);San Diego CA(US);San Diego CA(US);San Diego CA(US)
作者
X.B. Mei; N.Y. Li; Y.P. Zeng; P.F. Chen; R.A. Johnson; P.M. Asbeck; C.W. Tu; A. Baca; T.J. Drummond;
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正文语种 eng
中图分类无线电电子学、电信技术;
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1. Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor [J] . Jung-Hui Tsai, Wen-Shiung Lour, Chia-Hong Huang, Solid-State Electronics . 2010,第3期

机译：InGaP / GaAs / InGaAs骆驼状栅极三角形掺杂p沟道场效应晶体管的研究
2. Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistors [J] . Ruden P.P., Shur M. IEEE Transactions on Electron Devices . 1989,第11期

机译：量子阱p沟道AlGaAs / InGaAs / GaAs异质结构绝缘栅场效应晶体管
3. Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistors with very high transconductance [J] . Daniels R.R., Ruden P.P. IEEE Electron Device Letters . 1988,第7期

机译：具有非常高跨导的量子阱p沟道AlGaAs / InGaAs / GaAs异质结构绝缘栅场效应晶体管
4. Strain-Compensated p-Channel InGaP/InGaAs Heterostructure Field-Effect Transistors [C] . X.B. Mei, N.Y. Li, Y.P. Zeng, Symposium on light emitting devices for optoelectronic applications . 1998

机译：应变补偿的P沟道Ingap / Ingaas异质结构场效应晶体管
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas [O] . Kexiong Zhang, Masatomo Sumiya, Meiyong Liao, -1

机译：基于极化诱导的二维空穴气的P沟道InGaN / GaN异质结构金属氧化物半导体场效应晶体管
7. Mesa-Sidewall Gate Leakage in InAlAs/InGaAs Heterostructure Field-Effect Transistors [O] . Eep R. Bahl, Student Member, Michael H. Leary, 2009

机译：Inalas / InGaas异质结构场效应晶体管中的台面 - 侧壁漏电

Strain-Compensated p-Channel InGaP/InGaAs Heterostructure Field-Effect Transistors

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