High Performance RF Sputtering Deposited ZnO Thin-Film Transistors

摘要

In this paper, the construction and characteristics of bottom-gate thin-film transistors (TFTs) that use ZnO as the active channel layer were investigated. The as-deposited ZnO film was sputtered under oxygen rich ambience with a metallic Zinc target at room temperature. TFT characteristics measurement shows that the TFTs work in the enhancement mode. The major performance parameters of the TFTs with SiN gate insulator include a field effect mobility of 3.5 cm2/ (Vs), an on-off current ratio more than 1×107 and a threshold voltage of 6.2V.