Optimization of Field Emission Properties of Gated CuO Nanowire Field Emitter Arrays for Field Emission Display Application

摘要

The field emission properties of a planar-gated cupric oxide (CuO) nanowire field emitters arrays for emission display (FED) application have been optimized. To protect the cathode electrode from oxidation, Al thin film is introduced on the Cr electrode. Furthermore, a selective wet etching process to remove the Al layer is used before the cathode preparation in order to improve the backcontact of CuO nanowire field emitters. The results show that the field emission properties including uniformity and maximum current of the CuO nanowires in the gated device structure were dramatically improved.