Optimization of Structure Parameters of Gated Nanowire Field Emitters for Field Emission Display Application

摘要

The optimal parameters of gated nanowire field emitters for field emission display application were studied. The device parameters such as geometric parameters of the nanowire, distance between gate electrode and cathode, the cathode to anode distance were simulated. It is found the nanowire height has an optimal value due to the combined effects of geometric field enhancement and gate induced electric field.