Electron-Phonon Scattering Effect on Strained Si Nanowire FETs at Low Temperature

机译：低温下应变硅纳米线FET的电子声子散射效应

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Strained Si nanowire FETs of nanowire width (W) of W=155nm and W=5000nm, are evaluated by I_d-V_(bg) characteristics at various temperatures. Transconductance (g_m) and subthreshold slope are obtained from the I_d-V_(bg) characteristics. The normalized g_m (g_m~*) increases by a factor of 1.38 for W=155nm and 3.13 for W=5000nm. Subthreshold slope decreases 22% for W=5000nm and 42% for W=155nm. This improvement is due to suppression of electron-phonon scattering at low temperature. This also indicates that the influence of electron-phonon interaction on g_m enhancement is different compared to that in bulk Si.

机译：通过I_d-V_（bg）特性在各种温度下评估纳米线宽度（W）为W = 155nm和W = 5000nm的应变Si纳米线FET。从I_d-V_（bg）特性获得跨导（g_m）和亚阈值斜率。对于W = 155nm，归一化的g_m（g_m〜*）增加1.38倍，而对于W = 5000nm，归一化的g_m增加3.13倍。对于W = 5000nm，亚阈值斜率降低22％，对于W = 155nm，亚阈值斜率降低42％。该改善是由于抑制了低温下的电子-声子散射。这也表明，电子-声子相互作用对g_m增强的影响与块状Si中的影响不同。

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《Physics and technology of high-k gate dielectrics 7》|2009年|439-443|共5页
会议地点 Vienna(AT)
作者
I. Tsuchida; A. Seike; H. Takai; J. Masuda; D. Kosemura; A. Ogura; T. Watanabe; I. Ohdomari;
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Faculty of Science and Engineering, Waseda University 3-4-1 Ohkubo, Shinjuku, Tokyo 169-8555, Japan;

Faculty of Science and Engineering, Waseda University 3-4-1 Ohkubo, Shinjuku, Tokyo 169-8555, Japan;

Faculty of Science and Engineering, Waseda University 3-4-1 Ohkubo, Shinjuku, Tokyo 169-8555, Japan;

School of Science and Technology, Meiji University 1-1-1 Higashimita, Tama, Kawasaki, 214-8571, Japan;

School of Science and Technology, Meiji University 1-1-1 Higashimita, Tama, Kawasaki, 214-8571, Japan;

School of Science and Technology, Meiji University 1-1-1 Higashimita, Tama, Kawasaki, 214-8571, Japan;

Faculty of Science and Engineering, Waseda University 3-4-1 Ohkubo, Shinjuku, Tokyo 169-8555, Japan;

Faculty of Science and Engineering, Waseda University 3-4-1 Ohkubo, Shinjuku, Tokyo 169-8555,;

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专利

1. Comment on 'Electron-phonon scattering in Sn-doped In2O3 FET nanowires probed by temperature-dependent measurements' [J] . Lin JJ, Wu CY Nanotechnology . 2009,第46期

机译：评论“通过温度相关测量探测掺锡的In2O3 FET纳米线中的电子声子散射”
2. Reply to 'Comment on "Electron-phonon scattering in Sn-doped In2O3 FET nanowires probed by temperature-dependent measurements"' [J] . Berengue OM, Chiquito AJ, Pozzi LP, Nanotechnology . 2009,第46期

机译：答复“关于“通过温度相关测量探测锡掺杂的In2O3 FET纳米线中电子声子散射的评论””
3. Size and temperature dependence of the electron-phonon scattering by donors in nanowire transistors [J] . Bescond M., Carrillo-Nunez H., Berrada S., Solid-State Electronics . 2016,第auga期

机译：纳米线晶体管中施主电子-声子散射的大小和温度依赖性
4. Electron-Phonon Scattering Effect on Strained Si Nanowire FETs at Low Temperature [C] . I. Tsuchida, A. Seike, H. Takai, Meeting of the Electrochemical Society . 2009

机译：在低温下应变Si纳米线FET的电子 - 声子散射效果
5. Low temperature electron-phonon interaction in disordered metal thin films and applications to fast, sensitive sub-millimeter photon sources and detectors. [D] . Shen, Minghao. 2006

机译：无序金属薄膜中的低温电子-声子相互作用及其在快速，灵敏的亚毫米光子源和检测器中的应用。
6. Orientation Effects in Ballistic High-Strained P-type Si Nanowire FETs [O] . Jia-Hong Zhang, Qing-An Huang, Hong Yu, 2009

机译：弹道高应变P型Si纳米线FET的取向效应
7. Enhanced Temperature Dependence of Phonon-Scattering-Limited Mobility in Compressively Uniaxial Strained pMOSFETs [O] . William Po-nien Chen, Jack Jyun-yan Kuo, Student Member, 2016

机译：压缩单轴应变pmOsFET中声子散射限制迁移率的增强温度依赖性
8. Remarks on the Contribution of Electron-Phonon Scattering to Low-Temperature Transport Coefficients in Metals [R] . Lawrence, W. E. 1981

机译：关于电子 - 声子散射对金属低温输运系数贡献的评述

Electron-Phonon Scattering Effect on Strained Si Nanowire FETs at Low Temperature

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