650-nm AlGaInP quantum well lasers for the a

摘要

Abstract: Main application of 650nm band laser diodes are for digital versatile disk (DVD). We demonstrate here the 650nm AlGaInP LD grown by LP-MOCVD with the structure of selected buried ridge waveguide. Excellent performance of LD have been achieved such as threshold current, threshold current density as low as 20mA and 350A/cm$+2$/ respectively at room temperature, the operating temperature up to 90 for the linear power output of 5mw. RIN is about $MIN@130db/Hz, the samples of LD have been certified by PUH manufacturers. !5