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A Power-on Reset Circuit for HVIC Targeting for Resiliency against High Voltage Peak Noise

机译:用于HVIC的上电复位电路,旨在抵御高压峰值噪声

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In HVIC (High Voltage Integrated Circuit) driving power semiconductor device, it is a crucial task tornprevent the driver output from being hauled up by power supply ramp-up at initial stage. For HVICrnapplications such as Fairchild SPM5, where HVICs drive the MOSFET devices, the PoR function impliesrnfar greater importance than IGBT driving counterparts, because they exploit relatively small bootstraprncapacitors. This paper describes a power-on reset circuit that is seamlessly interwoven with an extantrnUVLO (Under Voltage Lock Out) circuit, thereby adding minimal number of circuit elements. The designrnof the circuit carries a special concern about the robustness against high voltage peak noise, which isrnsevere especially on the high side DC link of the MOSFET-based inverter applications. The proposedrncircuit is implemented using the Fairchild HDG4D BCDMOS high voltage process, which has 680VrnLDMOS and 25V 1.2μm CMOS and BJT cells.
机译:在HVIC(高压集成电路)驱动功率半导体器件中,防止驱动器输出在初始阶段被电源斜升拉紧是至关重要的任务。对于飞兆半导体SPM5等HVIC应用,其中HVIC驱动MOSFET器件,PoR功能比IGBT驱动同类产品具有更高的重要性,因为它们采用了相对较小的自举电容器。本文介绍了一种上电复位电路,该电路与现存的UVLO(欠压锁定)电路无缝地交织在一起,从而增加了最少的电路元件。电路的设计特别关注抗高压峰值噪声的鲁棒性,尤其是在基于MOSFET的逆变器应用的高端直流链路上,这种鲁棒性尤其严重。拟议的电路使用飞兆半导体HDG4D BCDMOS高压工艺实现,该工艺具有680VrnLDMOS和25V1.2μmCMOS和BJT单元。

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