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Time-of-Flight Based Pixel Architecture with Integrated Double- Cathode Photodetector

机译:集成双阴极光电探测器的基于飞行时间的像素架构

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摘要

For various industrial applications contact-less optical 3D distance measurement systems with active illumination are suitable. A new approach for a pixel of such a 3D-camera chip for applications in displacement and 3D-shape measurement is presented here. The distance information is gained by measuring the Time-of-Flight (TOF) of photons transmitted by a modulated light source to a diffuse reflecting object and back to the receiver IC. The receiver is implemented as an opto-electronic integrated circuit (OEIC). It consists of a double-cathode photodetector performing an opto-electronic correlation, a decoupling network and an output low-pass filter on a single silicon chip. The correlation of the received optical signal and the electronic modulation signal enables the determination of the phase-shift between them. The phase-shift is directly proportional to the distance of the object. The measurement time for a single distance measurement is 20 ms for a range up to 6.2 m. The standard deviation up to 3.4 m is better than lcm for a transmitted optical power of 1.2 Mw at a wavelength of 650 nm. The OEIC was fabricated in a slightly modified 0.6 μm BiCMOS technology with a PIN-photodetector. The photosensitive area of the integrated PIN-photodetector is 120×115 μm~2. A fill factor of ~67 % is reached.
机译:对于各种工业应用,具有主动照明的非接触式光学3D测距系统是合适的。本文介绍了一种用于位移和3D形状测量的此类3D相机芯片像素的新方法。通过测量由调制光源传输至漫反射物体并返回至接收器IC的光子的飞行时间(TOF),可以获得距离信息。接收器实现为光电集成电路(OEIC)。它由在单个硅芯片上执行光电关联的双阴极光电检测器,去耦网络和输出低通滤波器组成。接收到的光信号和电子调制信号的相关性使得能够确定它们之间的相移。相移与物体的距离成正比。单个距离测量的测量时间为20 ms,最大范围为6.2 m。对于在650 nm波长下传输的1.2 Mw的光功率,高达3.4 m的标准偏差优于1cm。 OEIC采用带有PIN光电探测器的经过稍微修改的0.6μmBiCMOS技术制造。集成式PIN光电探测器的感光面积为120×115μm〜2。达到〜67%的填充系数。

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