Abstract: The photoluminescence (PL) and infrared (IR) absorption spectra of porous silicon prepared in different conditions have been studied. HF post-anodization treatment was used to modify the porous silicon properties. It is shown that the samples obtained at higher current density show more intense visible PL. It was also found that there is a correlation between the intensity of luminescence peak and that of IR- absorption peaks related to the Si-O-Si and O$-3$/-Si-H modes. The obtained results suggest that surface complexes related to oxygen or hydrogen with oxygen are responsible for the intense visible PL in the samples of porous silicon subjected to HF treatment and exposed to the ambient air.!12
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