Extremely small AWG demultiplexer fabricated on InP by usinga double-etch process

机译：采用双蚀刻工艺在InP上制造的超小型AWG多路分解器

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A compact low-loss 4×4 AWG demultiplexer with a channel spacing of 400GHz isrnpresented. The device size is reduced to only 230×330μm2. Measured insertion losses are less thanrn5dB and the crosstalk is below -12dB.

机译：展示了一种紧凑的低损耗4×4 AWG多路分解器，其信道间隔为400GHz。器件尺寸减小到只有230×330μm2。测得的插入损耗小于rn5dB，串扰小于-12dB。

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来源
《Optical amplifiers and their applications integrated photonics research topical meetings: technical digest》|2004年|1-3|共3页
会议地点 San Francisco CA(US)
作者
Y. Barbarin; X.J.M. Leijtens; E.A.J.M. Bente; C.M. Louzao; J.R. Kooiman; M.K. Smit;
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作者单位

COBRA, Eindhoven University of Technology Den Dolech 2, P.O. Box 513, 5600 MB, Eindhoven, The Netherlandsrny.barbarin@tue.nl;

COBRA, Eindhoven University of Technology Den Dolech 2, P.O. Box 513, 5600 MB, Eindhoven, The Netherlands;

COBRA, Eindhoven University of Technology Den Dolech 2, P.O. Box 513, 5600 MB, Eindhoven, The Netherlands;

COBRA, Eindhoven University of Technology Den Dolech 2, P.O. Box 513, 5600 MB, Eindhoven, The Netherlands;

COBRA, Eindhoven University of Technology Den Dolech 2, P.O. Box 513, 5600 MB, Eindhoven, The Netherlands;

COBRA, Eindhoven University of Technology Den Dolech 2, P.O. Box 513, 5600 MB, Eindhoven, The Netherlands;

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原文格式 PDF
正文语种 eng
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Integrated optics devices; Guided waves;

机译：集成光学器件；导波;

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专利

1. 4 x 25 GHz uni-traveling carrier photodiode arrays monolithic with InP-based AWG demultiplexers using the selective area growth technique [J] . Ye Han, Han Qin, Lv Qianqian, Limnology and oceanography, methods . 2017,第8期

机译：4 x 25 GHz UNI-TVAILITING载体光电二极管阵列单片与基于INP的AWG多路分解器使用选择性区域生长技术
2. Polarisation dispersion compensated AWG demultiplexer fabricated in single shallow etching step [J] . He J.-J., Lamontagne B. Electronics Letters . 1999,第9期

机译：在单个浅蚀刻步骤中制造的偏振色散补偿AWG多路分解器
3. Extremely small polarization independent phased-array demultiplexers on InP [J] . Bissessur H., Pagnod-Rossiaux P. IEEE Photonics Technology Letters . 1996,第4期

机译：InP上的极小偏振独立相控阵解复用器
4. Extremely small AWG demultiplexer fabricated on InP by using a double-etch process [C] . Y. Barbarin, X. J. M. Leijtens, E. A. J. M. Bente, Optical Amplifiers and Their Applications Integrated Photonics Research Topical Meetings . 2004

机译：通过使用双重蚀刻工艺在INP上制造极小的AWG解复用器
5. Study on the modeling, analysis and compensation of on-board processing (OBP) multicarrier demultiplexer/demodulators (MCDD) for the MF-TDMA signal in the presence of degrading factors. [D] . Li, Jinyan. 2007

机译：在存在退化因素的情况下，对MF-TDMA信号的车载处理（OBP）多载波解复用器/解调器（MCDD）进行建模，分析和补偿的研究。
6. Oxygen-Evolution Activity of p–n HeterojunctionNiO–SnO2 Ceramic on Ti Substrate Fabricated Usinga Simple Layer-by-Layer Method [O] . Mingzhu Wu, Ying Li, Jun Du, 2020

机译：P-N异质结的氧气演化活动在使用的Ti衬底上的Nio-SnO2陶瓷一个简单的逐层方法
7. Extremely Small AWG Demultiplexer Fabricated on InP by Using a Double-Etch Process [O] . Y. Barbarin, X.J.M. Leijtens, E.A.J.M. Bente, 2004

机译：通过使用双重蚀刻工艺在INP上制造极小的AWG解复用器

Extremely small AWG demultiplexer fabricated on InP by usinga double-etch process

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