Preparation And Characterisation Of Copper Indium Selenide Thin Film Solar Cells

摘要

Copper indium selenide (CIS) this film solar cells can be prepared by electrodeposition, dip coating and flash annealing at 400℃. In this paper the author has reported a single step electrodeposition process for the growth of CIS thin film on molybdenum substrate. The films have been prepared potentiostatically and galvanostatically. The as deposited films are preferably oriented along (112) direction and have low resistivity which is further reduced by annealing in air. The grains are densely packed, well connected and no effects of charges are seen at the surface of the films. The cadmium sulphide (CdS) thin film can be prepared by dip coating technique on glass, molybdenum and CIS thin film substrates. The as deposited films are smooth, uniform and preferably oriented along (002) direction. The high resistive as deposited CdS films are reduced by flash annealing in air at 400℃. The ratio of Cd/S in the film is equal to 1.1 at the surface and across it. The thickness of the film depends upon the duration of deposition and molar concentration and it is observed that 5 minutes deposited films are good for device applications. The Ⅰ- V characteristics of CIS solar cells in forward and reverse bias are similar to ideal diode. The open circuit voltage Voc and short circuit current density Jsc are ≈200 mV and ≈ 10mA/cm~2 respectively. The results are preliminary in nature and by optimising the growth conditions further improvement in result is expected.