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Fabrication of Conductive Glass Nanocomposites with Networks of Antimony Tin Oxide

机译:氧化锑锡网络制备导电玻璃纳米复合材料

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The percolation threshold in a ceramic composite depends on the processing conditions used to fabricate them along with the size and shape of the filler. In this study, borosilicate glass microspheres were used as the matrix material and nanosized antimony tin oxide (ATO) particles were used as the filler. The microsphere/ATO composites were fabricated by hot pressing around the glass transition temperature in order to control the viscosity. The pressure and temperature applied allowed the ATO to be confined to the spaces between certain glass particles, forming percolating networks at low volume fractions of the ATO. The electrical properties were examined using ac impedance spectroscopy. The impedance, electric modulus, and tan δ were studied which allowed for valuable insights in structure-property-processing relationships in these materials, along with determination of the percolation behavior in these composites. This analysis on samples right before percolation indicated that there was a highly resistive component affecting long range conductivity which is likely due to porosity at the triple points while the dielectric response is affected by the clusters of ATO nanoparticles. Based on this, the percolation of ATO should reduce down to lower concentrations if the processing conditions are improved to reduce this porosity and further segregate the ATO.
机译:陶瓷复合材料的渗透阈值取决于制造它们的工艺条件以及填料的尺寸和形状。在这项研究中,硼硅酸盐玻璃微球用作基质材料,纳米级氧化锡锑(ATO)颗粒用作填充剂。通过在玻璃化转变温度附近热压来制备微球/ ATO复合材料,以控制粘度。施加的压力和温度使ATO限于某些玻璃颗粒之间的空间,从而在ATO的体积分数低时形成了渗滤网络。使用交流阻抗谱检查电性能。对阻抗,电模量和tanδ进行了研究,从而为这些材料的结构-特性-加工关系提供了宝贵的见识,并确定了这些复合材料的渗透行为。渗滤之前样品的分析表明,存在影响远距离电导率的高电阻成分,这很可能是由于三点的孔隙率所致,而介电响应却受到ATO纳米粒子簇的影响。基于此,如果改善了加工条件以减少孔隙率并进一步分离ATO,则ATO的渗滤应降低至较低的浓度。

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  • 会议地点 San Francisco CA(US)
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    School of Materials Science and Engineering, Georgia Institute of Technology Atlanta, GA 30332-0245, U.S.A.;

    School of Materials Science and Engineering, Georgia Institute of Technology Atlanta, GA 30332-0245, U.S.A.;

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