The Design of AIGaN/GaN HEFT-micro-accelerometer and Temperature- dependence Electrical Performance

摘要

In this paper, We use a novel principle to detect acceleration and report how I-V characteristics and piezoresistance coefficient of AlGaN/GaN HEFT-micro-accelerometer are affected by setting different temperatures. It is shown that saturation current of device would go down if the temperature goes up, which is about 0.028mA/℃, based on the research. However, the device can work well at the temperature range of -50℃ to 50℃, which indicates that it can work safely in the larger temperature range.