Dopant-Induced Terahertz Resonance of a Dopant-Rich Silicon Quantum Dot

摘要

Dopants provide attractive and interesting properties, such as robust quantum states and low-energy physics. Since typical energy depth of dopants corresponds to terahertz (THz) photon energy, optical control of trapped and de-trapped electrons is feasible, paving a pathway for developing new functional electronic/optical devices. Here, we experimentally demonstrate THz-induced de-trapping processes in a dopant-rich silicon quantum dot. Our study offers a deeper understanding of optical properties of dopants, and potentially leads to new functional dopant-based THz devices.