Switching Current of Ta2O5-Based Resistive Analog Memories

摘要

Multilevel switching (MS) behaviors in Ta₂O₅-based resistive random-access-memory (ReRAM) have been drawing attentions as hardware artificial synapse. However, operating resistances, which decide the power consumption of whole system, are relatively low for future integration. In this work, we investigated the characteristics of two kinds of ReRAMs operating with different mechanisms; Cu-top-electrode and Ta-top-electrode Ta₂O₅-based ReRAMs. By taking account of resistance of high resistive state (HRS), we clarify the difference of MS characteristics between the two kinds of ReRAM devices.