Characterization and Analysis of 5 nm-thick Hf0.5Zr0.5O2 for Negative Capacitance FinFET

摘要

Negative capacitance (NC) Fin field effect transistors (FinFET) were experimentally demonstrated. These devices had complete dimensions of single channel widths (W_Ch) from 20 nm to 1000 nm and gate lengths (L_G) from 100 nm to 2000 nm. Experimental results show that W_Ch is smaller than 30 nm and L_G > W_Ch, this proposed 5-nm-HZO Si NC-FinFET guarantees SS <; 60 mV/decade.