Resistive Switching in Memristors Based on Artificially Stacked Chemical-Vapor-Deposited Hexagonal-Boron Nitride

摘要

Vertical nickel-hexagonal boron nitride (hBN)-nickel memristive devices based on mechanically stacked monolayer hBN are fabricated and electrically characterized. The devices reveal threshold resistive switching behavior. Comparative electrical measurements in air and vacuum indicate an influence of the measurement conditions on the cycle-to-cycle variability of the devices.