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Architecture and optimization of associative memories used for the implementation of logic functions based on nanoelectronic 1S1R cells

机译:基于纳米电子1S1R细胞的逻辑函数实现的关联存储器的体系结构和优化

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A neuromorphic architecture based on Binary Associative memories and nanoelectronic resistive switches is proposed for the realization of arbitrary logic/arithmetic functions. Subsets of non-trivial code sets based on error detecting 2-out-of-n-codes are thoroughly used to encode operands, results, and intermediate states in order to enhance the circuit reliability by mitigating the impact of device variability. 2-ary functions can be implemented by cascading a mixer memory, a correlator memory, and a response memory. By introduction of a new cost function based on class-specific word-line-coverage, stochastic optimization is applied with the aim to minimize the overall number of active amplifiers. For various exemplary functions optimized architectures are compared against solutions obtained using a standard-cost function. It is especially shown that the consideration of word-line-coverage results in a significant circuit compaction.
机译:提出了一种基于二元关联存储器和纳米电子电阻开关的神经形态架构,用于实现任意逻辑/算术函数。基于检测2-OUT-N码的错误的非平凡码集的子集彻底地用于编码操作数,结果和中间状态,以通过减轻器件可变性的影响来增强电路可靠性。可以通过级联混频器存储器,相关器存储器和响应存储器来实现2个ary函数。通过基于特定类字线覆盖范围的新成本函数,应用随机优化,目的是最小化有源放大器的总数。对于各种示例性功能,将优化的架构与使用标准成本函数获得的解决方案进行比较。特别表明,话语线覆盖的考虑导致显着的电路压实。

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