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Enhanced Spontaneous Polarization of Dysprosium-substituted Lead Zirconate Titanate Thin Films by a Chemical Solution Deposition Method

机译:通过化学溶液沉积方法增强镝取代的锆钛酸锆钛酸钛酸钛酸钛酸酯的自发极化

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Influences of the B-site substitution using Dy~(3+) ion on the crystal structure and ferroelectric properties of lead zirconate titanate (PZT) films were investigated. Dy~(3+)-substiruted PZT films with nominal chemical compositions of Pb_(1.00)Dy_x(Zr_(0.40)Ti_(0.60))_(1-(3x/4))O_3 (x = 0 ~ 0.06) were fabricated by a chemical solution deposition (CSD). Polycrystalline PZT films with preferential orientation of (111)PZT were obtained on (111)Pt/TiO_2/SiO_2/(100)Si substrates, while epitaxially-grown (111)PZT films were fabricated on (111)SrRuO_3∥(111)Pt∥(100)YSZ∥(100)Si substrate. Ratio of PZT lattice parameters (c/a), which corresponds to its crystal anisotropy, was enhanced by the Dy~(3+)-substitution with x = 0.02. Spontaneous polarization (P_s) of Dy~(3+)-substituted PZT film (x = 0.02) along polar [001] axis of PZT lattice was estimated from saturation polarization (P_(sat)) value of the epitaxially-grown (111)PZT film on (111)SrRuO_3∥(111)Pt∥(100)YSZ∥(100)Si to be 84 μC/cm~2 that was significantly larger than that of non-substituted PZT (= 71 μC/cm~2). We concluded that the enhancement of P_s value could be achieved by the Dy~(3+)-substitution that promoted the crystal anisotropy of PZT lattice.
机译:研究了使用Dy〜(3+)离子对晶体结构和铅锆酯钛酸铅(PZT)膜的晶体结构和铁电性能的影响。 DY〜(3 +) - 具有PB_(1.00)DY_x(Zr_(0.40)Ti_(0.60))_(1-(3×/ 4))O_3(x = 0〜0.06)的标称化学组成的含有标称化学组成的PZT薄膜通过化学溶液沉积(CSD)。在(111)Pt / TiO_2 / SiO_2 /(100)Si底物上获得具有(111)PZT的优先取向的多晶PZT薄膜,而外延生长(111)PZT薄膜在(111)Srruo_3 =(111)Pt上∥(100)YSZ∥(100)Si衬底。与其晶体各向异性相对应的PZT晶格参数(C / A)的比例通过X = 0.02的Dy〜(3 +)取代而增强。沿着饱和偏振(111)的饱和偏振(111)的饱和偏振(P_(SAT))值估计Dy〜(3 +) - 取代的PZT膜(x = 0.02)的自发极化(x = 0.02)估计PTT薄膜(111)Srruo_3∥(111)pt∥(100)ysz∥(100)Si为84μC/ cm〜2,其明显大于未取代的PZT(=71μC/ cm〜2) 。我们得出结论,可以通过Dy〜(3 +) - 替代P_S值的增强 - 促进PZT格子的晶体各向异性。

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