Chemical Vapor Deposition of Tantalum Nitride Films Using Pentakis(Diethylamido) Tantalum and Ammonia

摘要

Tantalum nitride (TaN) films were deposited by using pentakis(diethylamido) tantalum and ammonia. The activation energies of the surface reactio nwere obtained with the NH_3 flow rate. In addition, the resistivity, composition ,crystal structure, and microstructure were systematically studied with the NH_3 flow rate from 0 to 25 sccm. The resistivity of the as-deposited film was decreased as the NH_3 flow rate was increased, but it was increased at the NH_3 flow rate of 25 sccm. The minimum value of resistivity is about 7000 #mu##he amount of etching but for Ti films over 200 A thick there was significant non-uniformity and peeli