首页>外文会议>其他>Symposium on advanced interconnects and contact materials and processes for future integrated circuits

Symposium on advanced interconnects and contact materials and processes for future integrated circuits

召开年：
召开地：
出版时间：-

会议文集：-

会议论文

热门论文

全部论文

全选（0）

1.New Approaches for Formation of Ultra-Thin PtSi Layers for Infrared Applications

机译：用于形成红外应用超薄PTSI层的新方法
- 作者：Ricardo A.Donaton;Sing Jin;Hugo Bender;Maxim Zagrebnov;Kris Baert;Karen Maex;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
2.Metal-GaN Contact Technology

机译：金属GaN联系方式
- 作者：S.S.Lau;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
3.Nanopatterning of Thin Cobaltdisilicide Layers by Local Oxidation

机译：局部氧化薄钴硅酸盐层的纳米薄膜
- 作者：F.Klinkhammer;L.Kappius;A.Antons;M.Dolle;H.Trinkaus;St.Mesters;H.-P.Bochem;S.Mantl;K.-H.Heinig;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
4.A Study of Transistor Optimzation in a 0.25 Micron Cmos Flow Using S/D and Silicide Process Modules and Their Interfactions

机译：使用S / D和硅化物处理模块及其相互作用研究0.25微米CMOS流动晶体管优化研究及其相互作用
- 作者：K.Vasanth;P.Apte;J.Davis;S.Saxena;R.Burch;S.Rao;P.K.Mozumder;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
5.Asymmetrical Heating Behavior At Ni/Doper-Si Junctions for Soi Structures

机译：用于SOI结构的Ni / Doper-Si结的不对称加热行为
- 作者：C.N.Liao;K.N.Tu;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
6.The Control and Impact of Processing Ambient During RTP

机译：RTP期间处理环境的控制和影响
- 作者：Karen Maex;Eiichi;Kondoh;Anne Lauwers;Murierl DePotter;Joris Prost;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
7.Growth and Characterization of Rare-Earth Phosphide/Arsenide Schottky Contacts to GaAs

机译：GaAs稀土磷化物/砷酰·肖特基触点的生长和表征
- 作者：P.P.Lee;J.H.Chern;L.P.Sadwick;R.J.Hwu;H.Balasubramaniam;B.R.Kumar;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
8.Imaging Spatial Variations in Resistance Along Interconnects

机译：沿互连的成像空间变化
- 作者：Qingzhe Wen;Hewlett-Packard;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
9.Carbon Nanotubes: Molecular Eelctronic Devices and Interconnects

机译：碳纳米管：分子eelctronic器件和互连
- 作者：Deepak Srivastava;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
10.Low Temperature CVD Route to Binary and Ternary Diffusion Barrier Nitrides for Cu Metallization

机译：低温CVD途径与二元和三元扩散屏障氮化物用于Cu金属化
- 作者：Alain E.Kaloyeros;Jean Kelsey;Cindy Goldberg;Dalaver Anjum;Xiaomeng Chen;Jawid Mirza;Kaushik Kumar;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
11.Analysis of Copper and Low-K Dielectric Interconnect System for 0.18-#mu#m Technology

机译：0.18-＃Mu＃M技术的铜和低k电介质互连系统分析
- 作者：X.W.Lin;K.Hui;K.Ghanderhari;S.Bothra;D.Pramanik;P.Findley;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
12.Characterization of Thin titanium and Titanium Nitride Layers Using Sims

机译：使用SIMS的薄钛和氮化钛层的表征
- 作者：Andrei V.Li-Fatou;Mauro R.Sardela;Jr.;Chunsheng Tian;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
13.Is Selective CVD An Improvement for the Titanium Silicide Process in Sub-Quarter Micron Technology? A Phase Formation Study Using X-Ray Diffraction

机译：选择性CVD是亚季度微米技术中硅化钛过程的改进吗？一种使用X射线衍射的相位形成研究
- 作者：Ronnen roy;Cryil Cabral;Jr.;Christian Lavoie;Jean Jordan-Sweet;R.Viswanathan;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
14.Is Selective CVD an Improvement for the Titanium Silicide Process in Sub-Quarter Micron Technology? A Phase Formation Study Using X-Ray Diffraction

机译：选择性CVD是亚季度微米技术中硅化钛过程的改进吗？一种使用X射线衍射的相位形成研究
- 作者：Ronnen Roy;Cryil Cabral;Jr.;Christian Lavoie;Jean Jordan-Sweet;R.Viswanathan;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
15.Ultra-Thin TaN Films as Diffusion Barriers for Cu Metallization

机译：超薄TAN薄膜作为Cu金属化的扩散屏障
- 作者：Sharon S.Huang;K.N.Tu;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
16.Finite Element Modeling for Interconnect materials and Structures

机译：用于互连材料和结构的有限元建模
- 作者：Lori Bassman;Peter Pinsky;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
17.Simulators of Thin Film Deposition for silicon Device Processing

机译：硅器件加工薄膜沉积模拟器
- 作者：G.H.Gilmer;F.H.Baumann;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
18.Growth and Characterization of Self-Aligned Erbium Silicide on N-Type, (100) Oriented Silicon

机译：N型，（100）定向硅的自对准硅化铒的生长和表征
- 作者：Suhit R.Das;Les LeBrun;G.Irwin Sproule;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
19.Mocvd of Copper From the Solution of new and Liquid Precursor

机译：来自新液体前体溶液的铜MOCVD
- 作者：H.-K.Shin;Y.-H.Cho;D.-J.Yoo;H.-J.Shin;E.-S.Lee;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
20.The effect of Impurities in TiN Film When Used as Mos Gate Eelctrodes

机译：用作MOS栅极Eelctrode时锡膜杂质的影响
- 作者：H.Yang;J.C.Hu;J.P.Lu;G.A.Brown;A.L.P.Rotondara;J.D.Luttmer;L.K.Magel;H.-Y.Liu;P.J.Chen;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
21.Process Design Integration of Salicide and Source/Drain Process Modules for Improved Device Performance

机译：PATICAID的过程设计与集成，用于改进的设备性能
- 作者：PUshkar P.Apte;Shared Saxena;Suraj Rao;Karthik Vasanth;Douglas A.Prinslow;Jorge A. Kittl;Terence Breedijk;gordon Pollack;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
22.Development of a Titanium Nitride Thin Film Standard

机译：开发氮化钛薄膜标准
- 作者：Eric Steel;Richard Deslattes;Joseph Pedulla;George Lamaze;Robert Greenberg;John Armstrong;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
23.Metal Contact on Nitride Based Materials

机译：氮化物材料上的金属接触
- 作者：F.Ren;C.R.Abernathy;M.Shurman;M.Hong;S.J.Pearton;J.R.Lothian;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
24.High Resolution Auger Imaging Combined With Focused Ion Beam For the Investigation of Metal/GaAs Contacts in High Power Transistors

机译：高分辨率螺旋钻成像结合聚焦离子束，用于研究高功率晶体管中的金属/ GaAs触点
- 作者：Patrick Etienne;Jean-pierre Landesman;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
25.Copper Metallization Layers On Bismuth-telluride Substrates: Effectiveness of Cr, Pt, And Ta_40Si_14N_46 Thin Films as Diffusion Barriers

机译：铋 - 碲化物底物上的铜金属化层：Cr，Pt和Ta_40si_14n_46薄膜的有效性作为扩散屏障
- 作者：T.Kacsich;M.-A.Nicolet;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
26.Theoretical Reactor Design From the Simple Tubular Reactor Analysis for WSix CVD Process

机译：理论反应器设计从简单的管状反应器分析进行WSIX CVD工艺
- 作者：Y.K.Chea;Y.Egashira;Y.Shimogaki;K.Sugawara;H.KOmiyama;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
27.Morphology of NiSi Film on Si(100): Role of the Interface Strain.

机译：Si（100）中NISI膜的形态：界面应变的作用。
- 作者：Eliane Maillard-Schaller;B.I.Boyanov;S.English;R.J.Nemanich;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
- NiSi;
- Si_1-xGe_x;
- strain;
- thermal stability;
- Morphology;
28.Effect of lateral dimension scaling on thermal stability of thin coSi_2 layers on polysilicon implanted with Si.

机译：横向尺寸缩放对Si植入多晶硅薄Cosi_2层热稳定性的影响。
- 作者：F.La Via;A.Alberti;M.G.Grimaldi;S.Ravesi;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
29.Organically Deposited Metallic Films for Device Fabrication

机译：有机沉积的装置制造金属膜
- 作者：T.OKeefe;M.Stroder;M.OKeefe;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
30.A novel Low Temperature Self-Aligned Ti Silicide Technology for Sub-0.18 #mu#m Cmos Devices

机译：一种新的低温自对准Ti硅化物技术，用于Sub-0.18＃mu＃M CMOS器件
- 作者：L.P.Ren;P.Liu;G.Z.Pan;Jason C.S.Woo;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
31.Sensitive Analysis of Deposition Chemistry of Cu From (Hfac)Cu(Tmvs) Using Well Characterized Test structure

机译：用井特征测试结构对（HFAC）Cu（TMV）沉积化学的敏感性分析
- 作者：Y.K.Chae;Y.Shimogaki;H.Komiyama;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
32.Effect of Oxygen on the Degradation of Ti-Si-N Diffusion Barriers in Cu Mefakkuzation

机译：氧对Cu Mefakkuzation Ti-Si-N扩散屏障降解的影响
- 作者：W.F.McArthur;K.M.Ring;B.Morgan;Q.Hurst;D.Serber;A.Clark K.L.Kavanagh;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
33.Effect of NH_3 Plasma Treatment on Etching of Ti During TiCl_4-Based Tin CVD Processes

机译：NH_3等离子体处理对TICL_4基锡CVD工艺蚀刻的影响
- 作者：M.E.Gross;E.Coleman;K.Ohto;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
34.PVD Ti-Si-N Films Process Development for Copper Interconnect Applications

机译：PVD TI-SI-N胶片用于铜互连应用的过程开发
- 作者：Jiming Zhang;Ram Venkatraman;Terri Wilson;Robert Fiordalice;Rich Gregory;Elizabeth Weitzman;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
35.Silicide Technology in Deep Submicron regime

机译：深度亚微米制度的硅化物技术
- 作者：K.Suguro;T.Iinuma;K.Ohuchi;K.Miyashita;H.Akutsu;H.Yoshimura;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
36.Growth, Patterning and Microelectronic Applications of Epitaxial coblatdisilicide

机译：外延Coblatdisilicide的生长，图案化和微电子应用
- 作者：S.Mantl;L.Kappius;A.Antons;M.Loeken;F.Klinkhammer;M.Dolle;Q.T.Zhao;S.Mesters;Ch.Buchal;H.L.Bay;B.Kabius;H. Trinkaus;K.H.Heninig;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
37.The Best way to Obtain Good quality CVD-TiN Films From TiCl_4 and NH_3

机译：从Ticl_4和NH_3获得优质CVD-TIN薄膜的最佳方法
- 作者：Hirotaka Hamamura;Yukihiro Shimogaki;Yasunobu Akiyama;Yasuyuki Egashira;Hiroshi Komiyama;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
38.Optimization of Ti and Co Self-Aligned Silicide RTP for 0.10 #mu#m CMOS

机译：Ti和Co自对准硅化物RTP的优化0.10＃mu＃M CMOS
- 作者：J.A.Kittl;Q.Z.Hong;H.Yang;N.Yu;M.Rodder;P.P.Apte;W.t.shiau;C.P.Chao;T.Breedijk;M.F.Pas;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
39.The Stability to Ageing of Pd/Zn and Pt-Based Ohmic Contacts to p-InGaAs/InP

机译：对P-Ingaas / InP的Pd / Zn和PT基欧姆触点时老化的稳定性
- 作者：P.W.Leech;G.K.Reeves;P.Ressel;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
40.Improved Thermal Stability of Ultrathin CoSi_2 Layers By Oxygen Annealing

机译：通过氧气退火改善超薄Cosi_2层的热稳定性
- 作者：R.T.Tung;S.Ohmi;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
41.Conducting Thin Films of Ruthenium Oxide Prepared By mocvd

机译：通过MOCVD进行氧化钌的薄膜
- 作者：P.Hones C.-H. Kohli;R.Sanjines;F.Levy;T.Gerfin;M.Graetzel;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
42.Kelvin Test Structure Modeling of Metal-Silicide-Silicon Contacts

机译：金属 - 硅化物 - 硅触点的Kelvin测试结构建模
- 作者：G.K.Reeves;A.S.Holland;P.W.Leech;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
43.Study of Factor and Interaction Effects During Programmed Rate Chemical Vapor Deposition of aluminum

机译：铝编程速率化学气相沉积中的因子和相互作用效应研究
- 作者：D.Yang;R.Jonnalagadda;B.R.rogers;J.T.Hillman;R.F.Foster;T.S.Cale;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
44.Etching of Platinum Thin Films by High Density Ar/Cl_2/HBr Plasma

机译：高密度Ar / Cl_2 / HBR等离子体蚀刻铂薄膜
- 作者：C.-I.Kim;N.-H.Kim;E.-G.Chang;K.-H. Kwon;G.-Y.Yeom;Y.-J.Seo;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
45.Monte Carlo Atomistic Simulation of Polycrystalline Aluminum Deposition

机译：多晶铝沉积的蒙特卡罗原子模拟
- 作者：J.emiliano rubio;Mrtin Jaraiz;Luis A.Bailon;Juan Barbolla;M Jose Lopez;George H.Gilmer;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
46.A Main Factor Determining The Uniform Step Cverage in Chemical Vapor Deposition

机译：确定化学气相沉积中均匀阶跃覆盖的主要因素
- 作者：Chee Burm Shin;Gyeong Soon Hwang;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
47.Pre-Treatment Effect on Aluminum Thin Films Deposition From CVD Using Dimethylethylamine alane

机译：使用二甲基胺alane对CVD铝薄膜沉积的预处理效应
- 作者：Tae Woong Jang;Hwa Sung Rhee;Byung Tae Ahn;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
48.Integration of NiSi Salicide for Deep Submicron CMOS Technologies

机译：深度亚亚微米CMOS技术的NISI Salicide集成
- 作者：X.W.Lin;N.Ibrahim;L.Topete;D.Pramanik;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
49.Formation of TiSi_2 Thin Films From Chemical Vapor Deposition Using TiI_4.

机译：使用TiI_4从化学气相沉积形成TISI_2薄膜。
- 作者：HwaSung Rhee;TaeWoong;Jang;Jong Tae Baek;Byung Tae Ahn;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
50.Selective Rapid Thermal Chemical Vapor Deposition of Titanium silicide on Arsenic Implanted Silicon

机译：砷植入硅硅化钛的选择性快速热化学气相沉积
- 作者：Hua Fang;Mechmet C.Oeztuerk;Edmund G.Seebauer;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
51.Mechanism of narrow lien effect in TiSi_2 films on highly As-doped diffusion layers

机译：在高度掺杂扩散层上TISI_2薄膜中窄留下厚度的机制
- 作者：Koichi Ishida;Hitoshi Wakabayashi;Tohru Mogami;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
52.Extendibility of Cu Damascene to 0.1 #mu#m Wide Interconnections

机译：Cu大麻拟米向下的可扩展性0.1＃mu＃m宽互连
- 作者：C-K.Hu;K.Y.Lee;Y.Gignac;S.M.Rossnagel;C.Uzoh;K.Chan;P.Roper J.M.E.Harper;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
53.Doping Influence of TiSi_2 C49-C54 Phase Conversion Kinetics by Micro-Raman Spectroscopy

机译：微拉曼光谱法掺杂TISI_2 C49-C54相转换动力学的影响
- 作者：F.Meinardi;S.Quilici;L.Moro;G.queirolo;A.Sabbadini;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
54.Oxide Mediated Epitaxy on Planar and Non-Planar Si

机译：平面和非平面Si的氧化物介导的外延
- 作者：R.T.tung;D.J.Howard;S.Ohmi;M.Caymax;K.Maex;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
55.Ambient Dependence of Agglomeration Stability of Cu/Ta Films

机译：Cu / Ta膜附聚稳定性的环境依赖性
- 作者：J.W.Hartman;H.A.Atwater;Imran Hashim;Barry Chin;Fusen Chen;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
56.Comparison of The Electromigration Behavior of Al(MgCu) Wit Al(Cu) and Al(SiCu)

机译：Al（MGCU）Wit Al（Cu）和Al（SICU）的电迁移行为的比较
- 作者：Hua Li;Ann Witvrouw;Sing Jin;Hugo Bender;Karen Maex;Ludo Froyen;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
57.Epitaxial Growth of CoGa on (10)GaAs by Metal-Organic Molecular Beam Epitaxy.

机译：金属 - 有机分子束外延的（10）GaAs的Coga外延生长。
- 作者：N.Viguier;F.Maury;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
58.C49-TiSi_2 Epitaxial Orientation Dependence of the C49-To-C54 Phase Transformation Rate

机译：C49-TISI_2 C49-TO-C54相变率的外延取向依赖性
- 作者：T.Nakamura;K.Ikeda;H.tomita;S.Komiya;K.Nakajima;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
59.In-Situ Regrowth of GaAs Through Controlled Phase Transformations and Reactions of Thin Films on GaAs.

机译：通过对GaAs上的受控相变和薄膜的反应原位再生。
- 作者：D.A.Caldwell;L.-C.Cen;A.H.Bensaoula;J.K.Farrer;C.B.Carter;C.J.Palmstr#PHI#m;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
60.Copper Electroplating for Damascene Ulsi Interconnects

机译：大型ULSI互连的铜电镀
- 作者：V.M.Dubin;S.Lopatin;S.Chen;R.Cheung;C.Ryu;S.S.Wong;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
61.Interfacial reactions in multilayers intended for microelectronics devices.

机译：用于微电子器件的多层界面反应。
- 作者：X.Federspiel F.Voiron;M.Ignat;T.Marieb;H.Fujimoto;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
62.A Suppression of the Phase Transition and Agglomeration of TiSi_2 By Addition of Zr Element

机译：通过添加Zr元素抑制TISI_2的相转变和凝聚
- 作者：Sanghyun Yoon;Hyeongtag Jeon;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
63.Thickness Effects in the Reaction of Cobalt with Silicon-Germanium Alloys

机译：钴与硅 - 锗合金反应的厚度效应
- 作者：B.I.Boyanov;P.T.Goeller;D.E.Sayers;R.J.Nemanich;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
64.Ion Beam Induced Metallorganic Chemical Vapor Deposition of Titanium Nitride Films as a Diffusion Barrier between Cu and Si

机译：离子束诱导氮化钛膜的金属化学气相沉积作为Cu和Si之间的扩散屏障
- 作者：Ki-Chul Park;Soo-Hyun Kim;Ki-Bum Kim;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
65.Chemical Vapor Deposition of Tantalum Nitride Films Using Pentakis(Diethylamido) Tantalum and Ammonia

机译：钽氮（二乙基氨基）钽和氨的化学气相沉积钽氮化物膜
- 作者：Sung-Lae Cho;Ki-Bum Kim;Seok-Hong Min;Hyun-Kook Shin;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
66.Properties of Cu_3Ge Films for Contacts to Si and SiGe and Cu Metallization

机译：Cu_3GE膜的触点与Si和SiGe和Cu金属化的性质
- 作者：Mark A.Borek;S.Oktyabrsky;M.O.Aboelfotoh;J.Narayan;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
67.Electrochemical and Material Study of Electroless Ternary Barries for Copper Interconnects

机译：铜互连电学三元禁区电化学研究
- 作者：S.Lopatin;Y.Kimp;Y.Shacham-diamand;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
68.The Influence of Capping Layer Type on Cobalt Salicide Formation in Films and Narrow Lines

机译：封盖层类型对薄膜钴蒜水形成的影响
- 作者：P.R.Beser;A.Lauwers;N.Roelandts;K.Maex;W.Blum;R.Alvis;M.Stucchi;M.De Potter;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
69.Homogenization of The Bilayers of cu-Al alloy and Pure Copper to Produce Cu-0.3 at

机译：Cu-Al合金的双层均质化和纯铜生产Cu-0.3
- 作者：Pei-I Wang;S.P.Murarka;S.Bedell;W.A.Lanford;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
70.Atomic Layer Deposition of TiN Thin Films by Sequential Introduction of Ti Precursor and NH_3

机译：通过连续引入Ti前体和NH_3，通过连续引入锡薄膜的原子层沉积
- 作者：Jae-Sik Min;Young-Woong Son;Won-Gu Kang;Sang-Won Kang;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
71.Solution Delivery for Copper CVD Using Cu(HFAC)_2 Reduction

机译：使用Cu（HFAC）_2 _2 _2℃oper铜CVD溶液
- 作者：C.Zeng;N.S.Borgharkar;G.L.Griffin;H.Fan;A.W.Maverick;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
72.Kinetics of hte C49-C54 transformation in patterned and blanket TiSi_2 films: a comparison.

机译：图案化和毯子TSI2薄膜C49-C54变换的动力学：比较。
- 作者：F.La Via;S.Privitera;M.G.Grimaldi;V.Raineri;M.Galli;F.Marabelli;M.Iannuzzi;L.Miglio;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年
73.Capacitance-Voltage, Current Voltage, And Thermal Stability of Copper alloyed With Aluminum or Magnesium

机译：电容电压，电流电压和与铝或镁合金的铜的热稳定性
- 作者：T.Suiwwan de Felipe;S.P.Murarka;S.Bedell;W.A.Lanford;Materials Research Society
- 会议名称：《Symposium on advanced interconnects and contact materials and processes for future integrated circuits》 | 1998年