Temperature performance of InGaAs/InGaAlAsTemperature performance of InGaAs/InGaAlAs laser diodes with δ-doping active region

摘要

The optical gain performance of 1530-1565 nm laser diodes with active regions containing p-doped barrier layers has been investigated. We have studied the threshold current density and differential quantum efficiency in wide temperature range and compared modal gain behaviour of laser diodes made of heterostructure with delta-doped barrier layers by carbon at level of 10~(12) cm~(-2) and heterostructure with undoped barrier layers.