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Efficient blue luminescence from colloidal CdSe quantum-dot quantum-well nanocrystals

机译:来自胶体Cdse量子点量子孔纳米晶体的高效蓝色发光

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CdS/CdSe/ZnS quantum dot quantum well (QDQW) nanocrystals were synthesized using the successive ion layer adsorption and reaction technique. CdSe QWs with a well width of 1.05 nm emitted blue light at 467 nm with a spectral full-width-at-half-maximum of ~30 nm. It was found that a 3-monolayer ZnS outer cladding layer can effectively passivate the QDQW structures, leading to a ~35% quantum yield (QY) of the QW photoluminescence. QDQW light-emitting diodes (LEDs) with blue QW electroluminescence (EL) were fabricated. The devices with an emitting layer comprising QDQWs embedded in a poly(N-vinylcarbazole) host were five times brighter than LEDs based on closely-packed QDQWs. However, the overall EL of the devices was dominated by interface state emission due to poor charge injection into the QDQWs.
机译:使用连续的离子层吸附和反应技术合成CDS / CDSE / ZnS量子阱量子阱(QDQW)纳米晶体。 CDSE QWS宽度为1.05nm的蓝光,467nm,光谱全宽度为半最大〜30 nm。发现3-单层ZnS外包层可以有效地钝化QDQW结构,导致QW光致发光的〜35%量子产率(Qy)。 QDQW发光二极管(LED)具有蓝色QW电致发光(EL)。具有嵌入在聚(n-乙烯基咔唑)主机中的QDQW的发光层的装置比基于紧密堆积的QDQW的LED亮的五倍。然而,由于电荷注入差到QDQW,设备的总体EL由接口状态发射主导。

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