Sintering mechanism of high heat-resistant, high oxidation-resistant (Ba,Sr)RuO3 conducting ceramics: Role of CuO and SiO2

摘要

Ruthenium oxides with perovskite and related structures have attracted much attention because they exhibit distinct physical properties such as high electrical conductivity, high thermal, chemical stability, superconductivity, and metamagnetic metallic behavior. Perovskite SrRuO3 is widely used as an electrode material for ferroelectric and semiconductor devices. Moreover, the films of SrRuO3 can be grown not only on SrTiO3 but even on Si substrates and play an important role in developing electronic devices made from other functional materials. as for the film growth of ferroelectric BaTiO3, KNbO3 and related perovskites with relatively large unit cells, a lattice misfit between ferroelectrics and SrRuO3 gives rise to a lattice relaxation in the vicinity of their interface and thereby a flexoelectric effect stemming from a strain gradient deteriorates the switching properties of ferroelectric polarization.