Simulation of Graphene-GaAs Schottky Junction Solar Cell with Graphene Gate by Finite Difference Method

摘要

Simulation of graphene-GaAs Schottky junction solar cell with graphene gate is performed by using finite difference method. Poisson and drift-diffusion equations are solved self-consistently to capture carrier dynamics in the solar cell. Our algorithm is verified by comparing with experimental results. The Schottky barrier between graphene and GaAs can be tuned by graphene gate, and hence the open circuit voltage is tunable due to the tunability of Schottky barrier. The carrier recombination in GaAs leads to loss of light generated carriers.