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Evolution of Structural, Electronic and Magneto-transport Properties of Sr2Ir_(1-x)Ti_xO_4 5d Based Oxide

机译:SR2IR_(1-X)TI_XO_4 5D氧化物结构,电子和磁传输性能的演化

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To investigate the effect of chemical doping on structural and transport properties in Sr_2lrO_4, in this study we have doped Ti~(4+) (3d~0) at Ir~(4+) (5d~5) site. Thus Ti doping introduces hole in the electronic band moreover, it also weaken the spin orbital coupling (SOC) and enhance electronic correlation (U). We have prepared the polycrystalline samples of Sr_2Ir_1-xTixO_4 with x= 0.0 0.05 and 0.10 with solid state reaction method. Single phase and chemically pure samples were obtained. All samples crystalizes in tetragonal structure and I_(41)/acd symmetry. The structural analysis shows the evolution oflattice parameter with doping. The temperature dependent resistivity is measured using four probe technique down in the temperature range 5 K -300 K. The resistivity increases with Ti doping. Temperature dependency of resistivity is explained by thermal activated 2-dimensional Mott Variable Hopping range model. To further understand the transport behavior both temperature and field dependent magneto-resistance is also studied. Negative magneto-resistance (MR) has been observed for all samples at 50 K. The MR shows quadratic field dependence at high field, implies a relevance of a quantum interference effect in this spin orbital coupled insulator.
机译:为了探讨化学掺杂对SR_2LRO_4中结构和运输性能的影响,在本研究中,我们在IR〜(4+)(5d〜5)位点上掺杂Ti〜(4+)(3D〜0)。因此,Ti掺杂引入了电子带中的孔,而且还削弱了旋转轨道耦合(SOC)并增强电子相关(U)。我们已经使用固态反应方法制备了SR_2IR_1-Xtixo_4的多晶样品,具有X = 0.05和0.10。获得单相和化学纯样品。所有样品在四边形结构和I_(41)/ ACD对称中结晶。结构分析显示了掺杂的术语演化。使用四个探针技术在5 k-300k的温度范围内测量温度依赖性电阻率。电阻率随Ti掺杂而增加。热源激活的二维MOTT可变跳闸范围模型解释电阻率的温度依赖性。为了进一步了解运输行为,还研究了温度和场依赖性磁阻。对于50k的所有样品,已经观察到负磁阻(MR)。MR显示在高场的二次场依赖性,意味着在该旋​​转轨道耦合绝缘体中的量子干扰效果的相关性。

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