Ultra-thin body and buried oxide (UTBB) SOI MOSFETs on Suppression of Short-Channel Effects (SCEs): A review

摘要

This paper reviews the different UTBB SOI MOSFET structures and their superiority in suppressing short-channel effects (SCEs). As the gate length (L_g), buried oxide thickness (T_(BOX)) and silicon thickness (T_(si)) are scaled down, the severity of SCEs becomes significant. The different UTBB SOI MOSFET device structures introduced to suppress these SCEs are discussed. The effectiveness of these structures in managing the associated SCEs such as drain-induced barrier lowering (DIBL), subthreshold swing (SS) and off-state leakage current (I_(off)) is also presented. Further evaluations are made on other competing CMOS technologies such as multigate MOSFETs (FinFETs, three-gates, four-gates) and junction less transistor in controlling the SCEs.