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Magnetoelastic properties of the epitaxially grown layers of Co2Fe0.4Mn0.6Si and Co2FeGa0.5Ge0.5 Heusler alloys

机译：Co2Fe0.4mN0.6SI和CO2FEGA0.5GE0.5 Heusler合金外延生长层的磁形弹性性能

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摘要

The half-metallic Co2Fe0.4Mn0.6Si (CFMS) and Co2FeGa0.5Ge0.5 (CFGG) Heusler alloys are representative materials showing high spin-polarization of conduction electrons.

机译：半金属CO2FE0.4MN0.6SI（CFMS）和CO2FEGA0.5GE0.5（CFGG）HEUSLER合金是表示导电电子的高自旋极化的代表性材料。

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《IEEE Magnetics Conference》|2017年|658p|共1页
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O.M. Chumak; A. Nabialek; R. Zuberek; L.T. Baczewski; I. Radelytskyi; H. Szymczak; T. Yamamoto; T. Seki; K. Takanashi;
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中图分类 O441.2-53;
关键词
Magnetostriction; Magnetic resonance; Anisotropic magnetoresistance; Magnetometers; Magnetic anisotropy; Strain;

机译：磁致伸缩;磁共振;各向异性磁阻;磁力计;磁各向异性;应变;

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专利

1. Magnetoelastic Properties of Epitaxially Grown Co₂Fe_0.4Mn_0.6Si and Co₂FeGa_0.5Ge_0.5 Heusler Alloys Thin Films [J] . O. M. Chumak, A. Nabiałek, R. Zuberek, IEEE Transactions on Magnetics . 2017,第11期

机译：外延生长的Co _{2 Fe _{0.4 Mn _{0.6 Si和Co _{2 FeGa _{0.5 的磁弹性性质sub> Ge _{0.5 Heusler合金薄膜}}}}}}
2. Structural and magnetotransport properties of CPP-GMR pseudo spin valves with (110) epitaxial layers of Co_2Fe(Ge_(0.5)Ga_(0.5)) Heusler alloy [J] . Jiamin CHEN, S. Li, T. Furubayashi, 日本磁気学会学術講演概要集 . 2013,第37期

机译：具有Co_2Fe（Ge_（0.5_Ga_（0.5））Heusler合金外延层（110）的CPP-GMR假自旋阀的结构和磁传输特性
3. Structural and magnetic properties of epitaxially grown full-Heusler alloy Co_2MnGe thin films deposited using magnetron sputtering [J] . Takayuki Ishikawa, Takao Marukame, Ken-ichi Matsuda, Journal of Applied Physics . 2006,第8Pt3期

机译：磁控溅射外延生长的全Heusler合金Co_2MnGe薄膜的结构和磁性
4. Magnetoelastic properties of the epitaxially grown layers of Co2Fe0.4Mn0.6Si and Co2FeGa0.5Ge0.5 Heusler alloys [C] . O.M. Chumak, A. Nabialek, R. Zuberek, IEEE International Magnetics Conference . 2017

机译：Co2Fe0.4Mn0.6Si和Co2FeGa0.5Ge0.5 Heusler合金外延生长层的磁弹性性能
5. Epitaxial growth, surface, and electronic properties of unconventional semiconductors: RE-V/III-V nanocomposites and semiconducting Half Heusler alloys [D] . Kawasaki, Jason Ken. 2014

机译：非常规半导体的外延生长，表面和电子性质：RE-V / III-V纳米复合材料和半导体半霍斯勒合金
6. Fully epitaxial C1b-type NiMnSb half-Heusler alloy films for current-perpendicular-to-plane giant magnetoresistance devices with a Ag spacer [O] . Zhenchao Wen, Takahide Kubota, Tatsuya Yamamoto, -1

机译：用于具有Ag隔片的电流垂直于平面的巨磁阻器件的全外延C1b型NiMnSb半霍斯勒合金膜
7. Magnetoelastic interactions and magnetic damping in Co2Fe0.4Mn0.6Si and Co2FeGa0.5Ge0.5 Heusler alloys thin films for spintronic applications [O] . O. M. Chumak, A. Pacewicz, A. Lynnyk, 2021

机译：Co2Fe0.4Mn0.6SI和CO2FEGA0.5GE0.5的磁性相互作用和磁阻耐磁阻用于旋转型应用的Heusler合金薄膜

Magnetoelastic properties of the epitaxially grown layers of Co2Fe0.4Mn0.6Si and Co2FeGa0.5Ge0.5 Heusler alloys

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