Effect of Doping On All TMC Vertical Heterointerfaces

摘要

The present work reports the growth and basic characterizations of GeSePb_x (x=0, 0.02, 0.04) layered mono chalcogenide single crystal substrates for preparation of heterojunction devices. These crystals are grown by Direct Vapour Transport (DVT) Technique [1,2]. Heterojunction interfaces on these substrates are prepared using thermal evaporation of nanocrystalline SnSe thin films having 5kA° thickness. The electrical characterizations reveal the rectifying behavior of the devices based on which its ideality factor, barrier height, saturation current, series resistance etc. have been determined using thermionic emission model [3,4]. The device parameters have been determined and analyzed by three different methods viz. Lnl-V, Cheung's method and Norde method [5].The variation in the device parameters in light of doping is reported in the present work.