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Peculiarities of Charge Transfer in Graphite Intercalation Compounds with Bromine and Iodine Chloride

机译:石墨嵌入化合物用溴和碘氯化物的电荷转移的特性

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59.1 Introduction Graphite intercalated compounds (GICs) are natural two-dimensional (2D) electronic systems in which carriers move mainly in parallel to the direction of the graphite planes. During the intercalation process there is a transfer charge from intercalate molecules to graphite layers and layers of graphite enriched with additional charge carriers. In this process, halogens and halides act as electronic acceptors, enriching the graphite layer with additional delocalized holes. Redistribution of charge between the layers of graphite and intercalate layers causes the formation of a charged layer of intercalate that contains localized electrons and acts as an electrostatic screen between the graphite layers on both sides of the intercalate layer. This high potential barrier prevents the movement of charge carriers through the intercalate layer perpendicular to the layers of graphite. The 2D properties of GICs arise from the existence of the charged intercalate layer with localized electrons. Thus, a charge carrier system in low-stage GICs is a degenerate 2D electron gas. The two-dimensionality of such electron gas is associated with structural features of the electronic structure of GICs. GICs are a perfect model to study the physical properties of 2D structures. A number of physical phenomena were investigated in acceptor GICs. Thus, the literature contains data on the study of charge carrier phonon drag, which for GICs based on high oriented pyrolitic graphite (HOPG) is manifested in a wide temperature range up to room temperature [1-4].
机译:59.1简介石墨嵌入化合物(GIC)是天然二维(2D)电子系统,其中载体主要平行于石墨平面的方向移动。在嵌入过程中,从嵌入分子到石墨层和富含额外电荷载体的石墨层的转移电荷。在该方法中,卤素和卤化物充当电子受体,富集石墨层与额外的分层孔。石墨层和嵌入层之间的电荷重新分布导致嵌入式的插入层的形成,该嵌入式包含局部电子,并用作插入层两侧的石墨层之间的静电屏幕。该高电位屏障防止电荷载体通过垂直于石墨层的嵌入层的运动。基于带有局部电子的带电嵌入层的存在,GIC的2D特性出现。因此,低级GIC的电荷载体系统是一种简并的2D电子气体。这种电子气体的二维性与GIC的电子结构的结构特征有关。研究博客是研究2D结构的物理性质的完美模型。在受体GICS中研究了许多物理现象。因此,文献含有关于电荷载体声子阻力研究的数据,其对于基于高取向的焦耳石墨(HOPG)的基因克斯的基因杆菌在宽温度范围内表现为室温[1-4]。

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