Experimental reliability studies and SPICE simulation for EEPROM at temperatures up to 450 °C

摘要

The paper presents reliability studies of single polysilicon EEPROM cells at temperatures from 50 °C to 450 °C. The technically challenging measurements at elevated temperatures above 250 °C have been carried out for accelerated reliability studies. Furthermore, a SPICE macro model has been extended to the wide temperature range to describe the retention and endurance performance of the memory cell and to enable a better insight into the physics involved.